2n60 inverter

4 FAQs about 2n60 inverter

What is a 2n60 MOSFET?

2N60 2 Amps, 600 Volts N-channel Mosfet DESCRIPTION. The UTC is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually

Is srm2n60 a high voltage MOSFET?

Datasheet 2A, 600V, N-Channel Power MOSFET SRM2N60General Description Symbol The Sanrise SRM2N60 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM2N60 break down voltage rating is 600V and it has a high rugged avalanche characteristics.

What is a RoHS 2n60 n-channel power MOSFET?

RoHS 2N60 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (2A, 600Volts) DESCRIPTION D The Nell 2N60 is a three-terminal silicon D device with current conduction capability of 2A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts.

What is the operating temperature of a 2n60 transistor?

2N60 Datasheet and Replacement, Transistor Equivalent Finder, Cross Reference. AllTransistors.com Max. Operating Junction Temperature (Tj): 85 °C ..1. Size:685K  1 ..2. Size:269K  utc

2N60 MOSFET Datasheet: N-Ch, 600V, 2A. Full specification

2N60 MOSFET PDF Datasheet: N-Ch/600V/2A. View the complete specification, pin configuration and find equivalents or replacement transistors.

AOD(U)(I)2N60_rohs_rev6

The AOI2N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

2N60 MOSFET Datasheet: N-Ch, 600V, 2A. Full

2N60 MOSFET PDF Datasheet: N-Ch/600V/2A. View the complete specification, pin configuration and find equivalents or replacement

2N60 PDF Datasheet – 2A, 600V, N-Ch, MOSFET,

The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge,

2N60 pdf Datasheet and Replacements, Transistor

2N60 datasheet. Find the spec. Find the substitute. Equivalents, pinouts, smd-codes, technical parameters.

2N60 Datasheet (PDF)

The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

2 Amps, 600 Volts

The 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

2N60 Datasheet, PDF

The 2N60 is an N-Channel MOSFET that is optimized for high voltage power applications, offering features such as fast switching, low gate charge,

2N60 datasheet

The UTC is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state

DATASHEET SEARCH SITE | .ALLDATASHEET

isc N-Channel Mosfet Transistor 2N60 FEATURES Drain Current –ID= 2A@ TC=25°C Drain Source Voltage- : VDSS= 600V(Min) Static Drain-Source On-Resistance : RDS(on) =

2N60 pdf Datasheet and Replacements, Transistor Equivalent

2N60 datasheet. Find the spec. Find the substitute. Equivalents, pinouts, smd-codes, technical parameters.

2N60 Datasheet, PDF

The 2N60 is an N-Channel MOSFET that is optimized for high voltage power applications, offering features such as fast switching, low gate charge, and low on-state resistance. It is also

2N60 PDF Datasheet – 2A, 600V, N-Ch, MOSFET, Transistor

The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

2N60 datasheet

The UTC is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

UNISONIC TECHNOLOGIES CO., LTD

The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

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