60N06 Datasheet PDF
Download the 60N06 datasheet PDF (298.05 KB) by Unisonic Technologies Co., Ltd. Key features, pinout, electrical characteristics, block diagram, and application circuit for n-channel
60N06 60 Amps, 60 Volts N-channel Power Mosfet DESCRIPTION. The UTC 60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application.. FEATURES.
AP60N06F 60V N-Channel Enhancement Mode MOSFET Description The AP60N06F uses advanced trench technology to provide excellent R, low gate charge and DS (ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
HMS60N06D N-Channel Super Trench Power MOSFET Description The HMS60N06D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q .
60V N-Channel Power MOSFE Description The MDT60N06 uses advanced trench technology to provide excellent RDS (ON), low gate charge. It can be used in a wide variety of applications. General Features V =60V, R See More ⇒ 0.69. Size:424K cn haohai electr
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