3DD15D pdf Datasheet and Replacements, Transistor Equivalent
isc Silicon NPN Power Transistor 3DD15D DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V (Min.) (BR)CEO DC Current Gain- h = 30 250 (Min.)@
PDF includes complete article with source references for printing and offline reading.
Download detailed specifications for our photovoltaic containers, BESS systems, and mobile energy storage solutions.
Industrial Zone 15, ul. Fabryczna 24
Pabianice 95-200, Poland
+48 42 212 00 00
Monday - Friday: 8:00 AM - 5:00 PM CET